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IXTT75N10L2

IXTT75N10L2

IXTT75N10L2

IXYS

N-Channel 100 Vds 215 nC 21 mOhm 400 W Power Mosfet

SOT-23

IXTT75N10L2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2009
Series Linear L2™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max 400W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 21m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 75A
Drain-source On Resistance-Max 0.021Ohm
Pulsed Drain Current-Max (IDM) 225A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 2500 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:391 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$15.334223$15.334223
10$14.466249$144.66249
100$13.647404$1364.7404
500$12.874909$6437.4545
1000$12.146141$12146.141

About IXTT75N10L2

The IXTT75N10L2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features N-Channel 100 Vds 215 nC 21 mOhm 400 W Power Mosfet.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTT75N10L2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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