IPB019N08N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPB019N08N3GATMA1 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
OptiMOS™
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-PSSO-G6
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Case Connection
DRAIN
Turn On Delay Time
28 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.9m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 270μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
14200pF @ 40V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Gate Charge (Qg) (Max) @ Vgs
206nC @ 10V
Rise Time
73ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
86 ns
Continuous Drain Current (ID)
180A
Threshold Voltage
2.8V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
80V
Drain to Source Breakdown Voltage
80V
Max Junction Temperature (Tj)
175°C
Height
4.5mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:1080 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IPB019N08N3GATMA1 Product Details
IPB019N08N3GATMA1 Description
The IPB019N08N3GATMA1 from Infineon Technologies is an OptiMOSTM 3 N-channel Power Transistor with exceptional gate charge x R DS (ON) product (FOM) and dual-sided cooling. DC/DC converter technology has been improved. A single component can solve both your amplification and switching issues. This MOSFET transistor has a temperature range of -55 to 175 degrees Celsius. This N channel MOSFET transistor operates in enhancement mode. IPB019N08N3GATMA1 employs Optimos technology.
IPB019N08N3GATMA1 Features
Halogen-free
Excellent gate charge
Very low on-resistance
100% Avalanche tested
Low parasitic inductance
IPB019N08N3GATMA1 Applications
Power Management
Consumer Electronics
Motor Drive & Control
Communications & Networking
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