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IXTP08N100P

IXTP08N100P

IXTP08N100P

IXYS

MOSFET N-CH 1000V 800MA TO-220

SOT-23

IXTP08N100P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2009
Series Polar™
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 42W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation42W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Rise Time37ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 800mA
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.8A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 1.8A
Avalanche Energy Rating (Eas) 80 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2478 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.700000$2.7
10$2.547170$25.4717
100$2.402990$240.299
500$2.266972$1133.486
1000$2.138653$2138.653

About IXTP08N100P

The IXTP08N100P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 1000V 800MA TO-220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTP08N100P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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