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IXTH12N70X2

IXTH12N70X2

IXTH12N70X2

IXYS

MOSFET N-CH

SOT-23

IXTH12N70X2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 180W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:1071 items

Pricing & Ordering

QuantityUnit PriceExt. Price
30$4.23000$126.9

About IXTH12N70X2

The IXTH12N70X2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTH12N70X2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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