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IXTA05N100

IXTA05N100

IXTA05N100

IXYS

MOSFET N-CH 1000V 0.75A TO-263

SOT-23

IXTA05N100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 17MOhm
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 40W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation40W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17 Ω @ 375mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 750mA Tc
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Rise Time19ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 3A
Avalanche Energy Rating (Eas) 100 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1540 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.138363$1.138363
10$1.073927$10.73927
100$1.013139$101.3139
500$0.955791$477.8955
1000$0.901690$901.69

About IXTA05N100

The IXTA05N100 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 1000V 0.75A TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTA05N100, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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