Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRFB4310PBF

IRFB4310PBF

IRFB4310PBF

Infineon Technologies

IRFB4310PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFB4310PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 7MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating140A
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 300W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
Turn On Delay Time26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 50V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 78 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 130A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 550A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 980 mJ
Recovery Time 68 ns
Nominal Vgs 4 V
Height 9.02mm
Length 10.6426mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1734 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.47000$3.47
50$2.83140$141.57
100$2.59780$259.78
500$2.14200$1071

IRFB4310PBF Product Details

Description


The IRFB4310PBF is an enhanced gate, avalanche, and dynamic dV/dt robust HEXFET? single N-channel Power MOSFET. In SMPS, hard switched, and high-frequency circuits, it is appropriate for synchronous rectification with high efficiency.



Features


  • Enhanced body diode dV/dt and dI/dt Capability

  • Lead-Free

  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • On-resistance (RDS(ON))



Applications


  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits

  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • Power Management


Get Subscriber

Enter Your Email Address, Get the Latest News