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IXSQ20N60B2D1

IXSQ20N60B2D1

IXSQ20N60B2D1

IXYS

Trans IGBT Chip N-CH 600V 35A 3-Pin(3+Tab) TO-247

SOT-23

IXSQ20N60B2D1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 5.500006g
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2004
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Voltage - Rated DC 600V
Max Power Dissipation190W
Current Rating35A
Base Part Number IXS*20N60
Element ConfigurationSingle
Power Dissipation190W
Input Type Standard
Rise Time30ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 35A
Reverse Recovery Time 30 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.5V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 16A
IGBT Type PT
Gate Charge33nC
Td (on/off) @ 25°C 30ns/116ns
Switching Energy 380μJ (off)
Height 21.46mm
Length 16.26mm
Width 5.3mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2238 items

About IXSQ20N60B2D1

The IXSQ20N60B2D1 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Chip N-CH 600V 35A 3-Pin(3+Tab) TO-247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXSQ20N60B2D1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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