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IXGT30N120B3D1

IXGT30N120B3D1

IXGT30N120B3D1

IXYS

Trans IGBT Chip 1.2KV 50A 3-Pin(2+Tab) TO-268

SOT-23

IXGT30N120B3D1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2008
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Additional FeatureLOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation300W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N120
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 100 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage3.5V
Turn On Time56 ns
Test Condition 960V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Turn Off Time-Nom (toff) 471 ns
IGBT Type PT
Gate Charge87nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/127ns
Switching Energy 3.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 5.1mm
Length 16.05mm
Width 14mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:777 items

Pricing & Ordering

QuantityUnit PriceExt. Price
30$6.67267$200.1801

About IXGT30N120B3D1

The IXGT30N120B3D1 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Chip 1.2KV 50A 3-Pin(2+Tab) TO-268.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXGT30N120B3D1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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