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IRG4RC10UTRL

IRG4RC10UTRL

IRG4RC10UTRL

Infineon Technologies

IRG4RC10UTRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC10UTRL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1999
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number IRG4RC10U
Input Type Standard
Power - Max 38W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 8.5A
Test Condition 480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Gate Charge15nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 19ns/116ns
Switching Energy 80μJ (on), 160μJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:3456 items

IRG4RC10UTRL Product Details

IRG4RC10UTRL Description


IRG4RC10UTRL emerges as an insulated gate bipolar transistor provided by Infineon Technologies. It is a generation 4 IGBT providing tighter parameter distribution and higher efficiency than the previous generation. IRG4RC10UTRL is optimized for high operating frequencies (8-40 kHz in hard switching) and for specified application conditions. It is available in the industry standard TO-252AA package for the purpose of saving board space.



IRG4RC10UTRL Features


Available in the TO-252AA package

Tighter parameter distribution

Higher efficiency

Optimized for specified application conditions

High operating frequencies



IRG4RC10UTRL Applications


AC motors

Switching power supplies


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