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IXFP4N100Q

IXFP4N100Q

IXFP4N100Q

IXYS

MOSFET (Metal Oxide) N-Channel Tube 3 Ω @ 2A, 10V ±20V 1050pF @ 25V 39nC @ 10V 1000V TO-220-3

SOT-23

IXFP4N100Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™
Published 2000
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3Ohm
Terminal Finish Pure Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count3
Number of Elements 1
Power Dissipation-Max 150W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 700 mJ
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3249 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.96000$5.96
50$4.79260$239.63
100$4.36650$436.65
500$3.53580$1767.9

IXFP4N100Q Product Details

IXFP4N100Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.A device's maximum input capacitance is 1050pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 4A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFP4N100Q Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 32 ns
a threshold voltage of 5V
a 1000V drain to source voltage (Vdss)


IXFP4N100Q Applications


There are a lot of IXYS
IXFP4N100Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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