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IRFH7110TR2PBF

IRFH7110TR2PBF

IRFH7110TR2PBF

Infineon Technologies

MOSFET N CH 100V 11A PQFN5X6

SOT-23

IRFH7110TR2PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-TQFN Exposed Pad
Supplier Device Package 8-PQFN (5x6)
PackagingCut Tape (CT)
Published 2013
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Drain to Source Voltage (Vdss) 100V
In-Stock:3136 items

About IRFH7110TR2PBF

The IRFH7110TR2PBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N CH 100V 11A PQFN5X6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRFH7110TR2PBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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