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FQD19N10TF

FQD19N10TF

FQD19N10TF

ON Semiconductor

MOSFET N-CH 100V 15.6A DPAK

SOT-23

FQD19N10TF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 50W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15.6A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
In-Stock:2812 items

About FQD19N10TF

The FQD19N10TF from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 15.6A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQD19N10TF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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