Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXFN360N10T

IXFN360N10T

IXFN360N10T

IXYS

Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B

SOT-23

IXFN360N10T Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2009
Series HiPerFET™
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 2.6MOhm
Terminal Finish NICKEL
Additional FeatureAVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count4
Number of Elements 1
Power Dissipation-Max 830W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation830W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 180A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 360A Tc
Gate Charge (Qg) (Max) @ Vgs 505nC @ 10V
Rise Time100ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 360A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 900A
Avalanche Energy Rating (Eas) 2000 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:366 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$20.99000$20.99
10$19.08000$190.8
30$17.64900$529.47
100$16.21800$1621.8
250$14.78700$3696.75
500$13.83300$6916.5

About IXFN360N10T

The IXFN360N10T from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFN360N10T, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News