Name: IPB100N06S2L05ATMA2
Brand: Infineon Technologies
SKU: IPB100N06S2L05ATMA2
Price: 4.79000 USD
Availability: InStock

new-10%

IPB100N06S2L05ATMA2

Manufacturer part number:IPB100N06S2L05ATMA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 100A TO263-3

Case Package:SOT-23

Datasheet:IPB100N06S2L05ATMA2 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	98 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain-source On Resistance-Max	0.0056Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	810 mJ
Height	4.57mm
Length	10.31mm
Width	9.45mm
RoHS Status	ROHS3 Compliant

About IPB100N06S2L05ATMA2

The IPB100N06S2L05ATMA2 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 55V 100A TO263-3.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB100N06S2L05ATMA2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.