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IXFN180N20

IXFN180N20

IXFN180N20

IXYS

MOSFET N-CH 200V 180A SOT-227B

SOT-23

IXFN180N20 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3
Weight 46g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series HiPerFET™
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
Termination Screw
ECCN Code EAR99
Resistance 10MOhm
Terminal Finish Nickel (Ni)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating180A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PUFM-X4
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation700W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 22000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 660nC @ 10V
Rise Time85ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 180 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 720A
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 4000 mJ
Isolation Voltage2.5kV
Nominal Vgs 4 V
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:172 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$40.46000$40.46
10$37.83500$378.35
30$34.99200$1049.76
100$32.80500$3280.5
250$30.61800$7654.5

About IXFN180N20

The IXFN180N20 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 180A SOT-227B.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFN180N20, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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