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IXFJ40N30Q

IXFJ40N30Q

IXFJ40N30Q

IXYS

MOSFET N-CHANNEL 300V 40A TO268

SOT-23

IXFJ40N30Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3, Short Tab
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:2493 items

About IXFJ40N30Q

The IXFJ40N30Q from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CHANNEL 300V 40A TO268.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFJ40N30Q, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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