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SPB10N10 G

SPB10N10 G

SPB10N10 G

Infineon Technologies

MOSFET N-CH 100V 10.3A D2PAK

SOT-23

SPB10N10 G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series SIPMOS®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 21μA
Input Capacitance (Ciss) (Max) @ Vds 426pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Tc
Gate Charge (Qg) (Max) @ Vgs 19.4nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:2807 items

About SPB10N10 G

The SPB10N10 G from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 10.3A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SPB10N10 G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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