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IXFH70N20Q3

IXFH70N20Q3

IXFH70N20Q3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 35A, 10V ±20V 3150pF @ 25V 67nC @ 10V TO-247-3

SOT-23

IXFH70N20Q3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™
Published 2011
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 40MOhm
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 690W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation690W
Case Connection DRAIN
Turn On Delay Time17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 210A
Avalanche Energy Rating (Eas) 1500 mJ
Height 16.26mm
Length 16.26mm
Width 5.3mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:534 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.33000$10.33
30$8.46667$254.0001
120$7.64050$916.86
510$6.40151$3264.7701

IXFH70N20Q3 Product Details

IXFH70N20Q3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 70A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 24 ns.Peak drain current for this device is 210A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH70N20Q3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 210A.


IXFH70N20Q3 Applications


There are a lot of IXYS
IXFH70N20Q3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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