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PTFA092213ELV4R250XTMA1

PTFA092213ELV4R250XTMA1

PTFA092213ELV4R250XTMA1

Infineon Technologies AG

PTFA092213ELV4R250XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies AG stock available on our website

SOT-23

PTFA092213ELV4R250XTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 12
Maximum VSWR 10
Maximum Drain Source Resistance (mOhm) 40(Typ)@10V
Output Power (W) 220
Typical Power Gain (dB) 17.5
Maximum Frequency (MHz) 960
Minimum Frequency (MHz) 920
Typical Drain Efficiency (%) 29
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 200
Military No
PackagingTape and Reel
Configuration Single
Channel Type N
Mode of OperationCW|2-Carrier W-CDMA
RoHS StatusRoHS Compliant
In-Stock:2206 items

About PTFA092213ELV4R250XTMA1

The PTFA092213ELV4R250XTMA1 from Infineon Technologies AG is a high-performance microcontroller designed for a wide range of embedded applications. This component features PTFA092213ELV4R250XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies AG stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PTFA092213ELV4R250XTMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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