IPP041N12N3 G Description
The IPP041N12N3 G is an OptiMOS? N-channel Power MOSFET offering at the same time the lowest ON-state resistance in the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS? IPP041N12N3 G gives new possibilities for optimized solutions. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPP041N12N3 G is in the TO-220-3 package with 300W power dissipation.
IPP041N12N3 G Features
Excellent gate charge x RDS (ON) product (FOM)
Very low ON-resistance RDS(on)
Excellent gate charge x RDS (ON) product (FOM)
MSL1 rated 2
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
IPP041N12N3 G Applications
