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GP1M009A020HG

GP1M009A020HG

GP1M009A020HG

SemiQ

MOSFET N-CH 200V 9A TO220

SOT-23

GP1M009A020HG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 52W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 414pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:3816 items

About GP1M009A020HG

The GP1M009A020HG from SemiQ is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 9A TO220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GP1M009A020HG, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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