IKP20N60T Description
Due to the combination of trench-cell and fieldstop concepts, hard-switching 600 V, 20 A TRENCHSTOPTM IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package results in significant improvement of the static and dynamic performance of the device. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.
IKP20N60T Features
Low EMI
Low Gate Charge
Very low VCE(sat) 1.5V (Typ.)
Short circuit withstand time 5μs
Pb-free lead plating; RoHS compliant
Maximum Junction Temperature 175°C
Positive temperature coefficient in VCE(sat)
Qualified according to JEDEC1 for target applications
Very soft, fast recovery anti-parallel Emitter Controlled HE diode.
IKP20N60T Applications
