SPI08N80C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
SPI08N80C3 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
Series
CoolMOS™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
104W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
650m Ω @ 5.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 470μA
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
8A
Drain-source On Resistance-Max
0.65Ohm
Pulsed Drain Current-Max (IDM)
24A
DS Breakdown Voltage-Min
800V
Avalanche Energy Rating (Eas)
340 mJ
RoHS Status
RoHS Compliant
In-Stock:8463 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.92000
$0.92
500
$0.9108
$455.4
1000
$0.9016
$901.6
1500
$0.8924
$1338.6
2000
$0.8832
$1766.4
2500
$0.874
$2185
SPI08N80C3 Product Details
SPI08N80C3 Description
The SPI08N80C3 is an 800V CoolMOS? N-channel Power MOSFET featuring ultra-low gate current. The Infineon SPI08N80C3 is designed for high DC bulk voltage and switching applications. The Operating and Storage Temperature Range is between -55 and 150??. And the MOSFET SPI08N80C3 is in the TO-262-3 package with 104W power dissipation.
SPI08N80C3 Features
New revolutionary high voltage technology
Extreme dv/dt rated
High peak current capability
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Ultra low gate charge
Ultra low effective capacitances
SPI08N80C3 Applications
Industrial
Consumer Electronics
Power Management
Lighting
Alternative Energy
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