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FDP047AN08A0-F102

FDP047AN08A0-F102

FDP047AN08A0-F102

ON Semiconductor

MOSFET N-CH 75V 80A TO-220AB-3

SOT-23

FDP047AN08A0-F102 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature-55°C~175°C TJ
PackagingTube
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 310W Tc
Element ConfigurationSingle
Power Dissipation310W
FET Type N-Channel
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Drain to Source Resistance 4.7mOhm
RoHS StatusROHS3 Compliant
In-Stock:2604 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$2.46054$1968.432

About FDP047AN08A0-F102

The FDP047AN08A0-F102 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 75V 80A TO-220AB-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDP047AN08A0-F102, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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