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SPD30P06P

  • SPD30P06P - SPD30P06P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
  • SPD30P06P - SPD30P06P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SPD30P06P

SPD30P06P

Infineon Technologies

SPD30P06P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPD30P06P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series SIPMOS®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-30A
[email protected] Reflow Temperature-Max (s) 20
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 125W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation125W
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 75m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1.7mA
Input Capacitance (Ciss) (Max) @ Vds 1535pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time11ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 250 mJ
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:2926 items

SPD30P06P Product Details

SPD30P06P Description


The Infineon Technologies SPD09P06P is a P-Channel SIPMOS Power-Transistor.



SPD30P06P Features

  • P-Channel

  • Enhancement mode

  • 175°C operating temperature

  • Avalanche rated

  • dv/dt rated



SPD30P06P Applications


  • Industrial


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