FDB6030L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDB6030L Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Operating Temperature
-65°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
13MOhm
Technology
MOSFET (Metal Oxide)
Current Rating
52A
Number of Elements
1
Power Dissipation-Max
52W Tc
Element Configuration
Single
Power Dissipation
52W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
13m Ω @ 26A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1250pF @ 15V
Current - Continuous Drain (Id) @ 25°C
48A Ta
Gate Charge (Qg) (Max) @ Vgs
18nC @ 5V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
29 ns
Continuous Drain Current (ID)
48A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:17630 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.49000
$0.49
500
$0.4851
$242.55
1000
$0.4802
$480.2
1500
$0.4753
$712.95
2000
$0.4704
$940.8
2500
$0.4655
$1163.75
FDB6030L Product Details
FDB6030L Description
FDB6030L belongs to the family of N-channel logic-level PowerTrench? MOSFETs which are designed based on high-performance trench technology to achieve faster switching speed and lower gate charge. It is specifically designed to improve the overall efficiency of DC-DC converters through either synchronous or conventional switching PWM controllers.
FDB6030L Features
Low gate charge
Low RDS(ON)
Fast switching speed
High-performance trench technology
Available in the TO-263AB package
FDB6030L Applications
DC-DC converters
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