HGTP7N60A4D Description
The HGTP7N60A4D devices combine the greatest qualities of MOSFETs and bipolar transistors in a MOS-gated high voltage switching device. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies slightly.
HGTP7N60A4D Features
? Operation At >100kHz At 390V, 7A
? Operation At 200kHz At 390V, 5A
? Capability for 600V Switching SOA
? Typical Fall Time.......................................
? Minimal Conductance Loss
HGTP7N60A4D Applications
Switching applications
