SIGC14T60NCX7SA2 Description
SIGC14T60NCX7SA2 belongs to the family of insulated gate bipolar transistor provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
SIGC14T60NCX7SA2 Features
Operating Temperature: -55°C~150°C TJ
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
SIGC14T60NCX7SA2 Applications
Welding
PFC
UPS
