FGB40N60SM Description
ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for welder and PFC applications that require low conduction and switching losses. FGB40N60SM has a maximum power dissipation of 349W and an operating temperature of -55°C175°C TJ. The FGB40N60SM has three pins and is packaged in a Tape & Reel (TR) format.
FGB40N60SM Features
Maximum junction temperature: TJ =175 °C
Positive temperaure co-efficient for an easy parallel operating
High current capability
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC =40A
Fast switching: EOFF =6.5uJ/A
Tightened parameter distribution
RoHS compliant
IR reflow only
FGB40N60SM Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
