SI4435DYPBF Description
The extraordinarily low on-resistance per silicon area of these P-channel HEXFET Power MOSFETs from International Rectifier is the result of sophisticated processing procedures. This advantage gives the designer access to a highly effective tool for use in load and battery management applications.
The SO-8 is excellent for a range of power applications because to modifications made to its leadframe, including improved thermal performance and multiple-die support. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering.
SI4435DYPBF Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
SI4435DYPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial