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SI4435DYPBF

SI4435DYPBF

SI4435DYPBF

Infineon Technologies

SI4435DYPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SI4435DYPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 1999
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureULTRA LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating ModeENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 30V
RoHS StatusROHS3 Compliant
In-Stock:2252 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.93000$0.93
10$0.82200$8.22
100$0.63000$63
500$0.49800$249

SI4435DYPBF Product Details

SI4435DYPBF Description


The extraordinarily low on-resistance per silicon area of these P-channel HEXFET Power MOSFETs from International Rectifier is the result of sophisticated processing procedures. This advantage gives the designer access to a highly effective tool for use in load and battery management applications.

The SO-8 is excellent for a range of power applications because to modifications made to its leadframe, including improved thermal performance and multiple-die support. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering.



SI4435DYPBF Features


  • Ultra Low On-Resistance

  • P-Channel MOSFET

  • Surface Mount

  • Available in Tape & Reel

  • Lead-Free



SI4435DYPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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