IRF7453 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7453 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2010
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
230mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
930pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.2A Ta
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
RoHS Status
Non-RoHS Compliant
In-Stock:2271 items
IRF7453 Product Details
IRF7453 Description
IRF7453 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a Drain to Source Voltage (Vdss) of 250V. The operating temperature of the IRF7453 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7453 has 8 pins and it is available in Tube packaging way.
IRF7453 Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRF7453 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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