SI4410DYTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
SI4410DYTRPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
HEXFET®
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
13.5mOhm
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
10A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1585pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10A Ta
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Rise Time
7.7ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
44 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
50A
Dual Supply Voltage
30V
Avalanche Energy Rating (Eas)
400 mJ
Nominal Vgs
1 V
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
In-Stock:4410 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.664279
$1.664279
10
$1.570074
$15.70074
100
$1.481202
$148.1202
500
$1.397361
$698.6805
1000
$1.318265
$1318.265
SI4410DYTRPBF Product Details
SI4410DYTRPBF Description
The SI4410DYTRPBF is a 30V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. The N-channel HEXFET? Power MOSFET SI4410DYTRPBF is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery-driven power conversion applications
SI4410DYTRPBF Features
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
SI4410DYTRPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
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