SGW15N120FKSA1 Description
The SGW15N120FKSA1 is a Fast IGBT in NPT-technology. With collector-emitter voltage levels ranging from 1100 to 1600V and TrenchStop? technology, an assortment of IGBT transistors from Infineon are available. Devices in the range have an integrated high-speed, quick recovery anti-parallel diode. Known for its high efficiency and fast switching, the Insulated Gate Bipolar Transistor, or IGBT is a three-terminal power semiconductor device. The IGBT combines an isolated gate FET for the control input and a bipolar power transistor as a switch in a single component, combining the specific gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage performance of bipolar transistors.
SGW15N120FKSA1 Features
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
40% lower Eoff compared to previous generation
Short circuit withstand time – 10 μs
Designed for:
- Motor controls
- Inverter
- SMPS
SGW15N120FKSA1 Applications
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
It is used in UPS (Uninterruptible Power Supply) system.
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters.
