IRG8P50N120KD-EPBF Description
IRG8P50N120KD-EPBF is a single IGBT transistor from the manufacturer Infineon Technologies with a breakdown voltage of 1200V. The operating temperature of the IRG8P50N120KD-EPBF is
-40°C~150°C TJ and its maximum power dissipation is 350W. IRG8P50N120KD-EPBF has 3 pins and it is available in Tube packaging way. The Max Collector Current of IRG8P50N120KD-EPBF is 50A.
IRG8P50N120KD-EPBF Features
Collector-Emitter Voltage (VCEO): 2V
Reverse Recovery Time: 170 ns
Voltage - Collector Emitter Breakdown (Max): 1200V
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Test Condition: 600V, 35A, 5 Ω, 15V
Gate Charge: 315nC
IRG8P50N120KD-EPBF Applications
Industrial Motor Drive
UPS
Solar Inverters
Welding
