SGB07N120ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SGB07N120ATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
125W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
16.5A
Turn On Time
56 ns
Test Condition
800V, 8A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.6V @ 15V, 8A
Turn Off Time-Nom (toff)
520 ns
IGBT Type
NPT
Gate Charge
70nC
Current - Collector Pulsed (Icm)
27A
Td (on/off) @ 25°C
27ns/440ns
Switching Energy
1mJ
RoHS Status
ROHS3 Compliant
In-Stock:2770 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
SGB07N120ATMA1 Product Details
SGB07N120ATMA1 Description
SGB07N120ATMA1 is a single IGBT from the manufacturer Infineon Technologies with the Voltage - Collector Emitter Breakdown (Max) of 1200V. The operating temperature of the SGB07N120ATMA1 is -55°C~150°C TJ and its maximum power dissipation is 125W. SGB07N120ATMA1 has 2 pins and it is available in Tape & Reel (TR) packaging way.
SGB07N120ATMA1 Features
lower Eoff compared to previous generation
Short circuit withstand time – 10 μs
NPT-Technology offers: very tight parameter distribution, high ruggedness, temperature stable behaviour, and parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
SGB07N120ATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
Related Products
Similar Transistors - IGBTs - Single from Infineon Technologies and other manufacturers
