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PTFB191501EV1R250XTMA1

PTFB191501EV1R250XTMA1

PTFB191501EV1R250XTMA1

Infineon Technologies

FET RF LDMOS 150W H36248-2

SOT-23

PTFB191501EV1R250XTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 2-Flatpack, Fin Leads
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Voltage - Rated 65V
Additional FeatureHGH RELIABILITY
Terminal Position DUAL
Reach Compliance Code compliant
Frequency 1.99GHz
Base Part Number PTFB191501
JESD-30 Code R-XDFM-F2
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.2A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 18dB
DS Breakdown Voltage-Min 65V
Power - Output 150W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 30V
In-Stock:4317 items

About PTFB191501EV1R250XTMA1

The PTFB191501EV1R250XTMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features FET RF LDMOS 150W H36248-2.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PTFB191501EV1R250XTMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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