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PTFA212001EV4R0XTMA1

PTFA212001EV4R0XTMA1

PTFA212001EV4R0XTMA1

Infineon Technologies

RF MOSFET LDMOS 30V H-36260-2

SOT-23

PTFA212001EV4R0XTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Package / Case 2-Flatpack, Fin Leads, Flanged
Surface MountYES
Transistor Element Material SILICON
PackagingStrip
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 10μA
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 2.11GHz~2.17GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.6A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 15.8dB
DS Breakdown Voltage-Min 65V
Power - Output 200W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 30V
RoHS StatusRoHS Compliant
In-Stock:1328 items

About PTFA212001EV4R0XTMA1

The PTFA212001EV4R0XTMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET LDMOS 30V H-36260-2.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PTFA212001EV4R0XTMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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