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PTFA092213ELV4R0XTMA1

PTFA092213ELV4R0XTMA1

PTFA092213ELV4R0XTMA1

Infineon Technologies

RFP-LDMOS GOLDMOS 8

SOT-23

PTFA092213ELV4R0XTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2016
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Position QUAD
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-CQFM-X6
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
DS Breakdown Voltage-Min 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY B
RoHS StatusRoHS Compliant
In-Stock:4042 items

About PTFA092213ELV4R0XTMA1

The PTFA092213ELV4R0XTMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features RFP-LDMOS GOLDMOS 8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PTFA092213ELV4R0XTMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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