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PTFA043002E V1

PTFA043002E V1

PTFA043002E V1

Infineon Technologies

IC FET RF LDMOS 300W H-30275-4

SOT-23

PTFA043002E V1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 2-Flatpack, Fin Leads
Surface MountYES
Transistor Element Material SILICON
PackagingTray
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
Voltage - Rated 65V
Additional FeatureHIGH RELIABILITY
Current Rating (Amps) 10μA
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Frequency 800MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-CDFM-F4
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.55A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 16dB
DS Breakdown Voltage-Min 65V
Power - Output 100W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 32V
RoHS StatusRoHS Compliant
In-Stock:4275 items

About PTFA043002E V1

The PTFA043002E V1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features IC FET RF LDMOS 300W H-30275-4.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PTFA043002E V1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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