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PTF180101S V1

PTF180101S V1

PTF180101S V1

Infineon Technologies

FET RF 65V 1.99GHZ H-32259-2

SOT-23

PTF180101S V1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case H32259-2
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2004
Series GOLDMOS®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Additional FeatureHIGH RELIABILITY
Current Rating (Amps) 1μA
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Frequency 1.99GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-XDSO-G2
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 180mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 19dB
DS Breakdown Voltage-Min 65V
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS StatusRoHS Compliant
In-Stock:3965 items

About PTF180101S V1

The PTF180101S V1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features FET RF 65V 1.99GHZ H-32259-2.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PTF180101S V1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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