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IRLR8726TRPBF

IRLR8726TRPBF

IRLR8726TRPBF

Infineon Technologies

IRLR8726TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IRLR8726TRPBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 75W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation75W
Case Connection DRAIN
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 86A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time49ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 86A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.058Ohm
Drain to Source Breakdown Voltage 30V
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:12229 items

Pricing & Ordering

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IRLR8726TRPBF Product Details

IRLR8726TRPBF Description


IRLR8726TRPBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. Due to its high quality and reliable performance of ultralow gate impedance and RDS (on) at 4.5 V, it is well suited for high-frequency synchronous buck converters for processor power and high-frequency isolated DC-DC converters with synchronous rectfication for telecom and industrial use.


IRLR8726TRPBF Features


Available in the D-Pak package
Drain-to-source voltage of 30 V
Ultralow gate impedance and RDS (on)
Operating junction temperature of -55 °C to +175 °C


IRLR8726TRPBF Applications


High-frequency synchronous buck converters
High-frequency isolated DC-DC converters with synchronous rectification

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