Name: FQP32N20C
Brand: ON Semiconductor
SKU: FQP32N20C
Price: 3.12000 USD
Availability: InStock

new-10%

FQP32N20C

Manufacturer part number:FQP32N20C

Manufacturer:ON Semiconductor

Description:FQP32N20C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP32N20C Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	28A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	156W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	82m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	270ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	210 ns
Turn-Off Delay Time	245 ns
Continuous Drain Current (ID)	28A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.082Ohm
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	955 mJ
Height	9.4mm
Length	10.1mm
Width	4.7mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FQP32N20C Product Details

FQP32N20C Description

FQP32N20C power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. FQP32N20C MOSFETs are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.