IRLR8503 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLR8503 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
62W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
44A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant
In-Stock:4406 items
IRLR8503 Product Details
IRLR8503 Description
This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and dv/dt-induced turn-on immunity. The IRLR8503 offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.
IRLR8503 Features
P-Channel Application-Specific MOSFET
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Minimizes Parallel MOSFETs for high current applications
IRLR8503 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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