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NTD25P03L1G

NTD25P03L1G

NTD25P03L1G

Rochester Electronics, LLC

P-CHANNEL POWER MOSFET

SOT-23

NTD25P03L1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 75W Tj
FET Type P-Channel
Rds On (Max) @ Id, Vgs 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.26pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±15V
RoHS StatusROHS3 Compliant
In-Stock:2724 items

About NTD25P03L1G

The NTD25P03L1G from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features P-CHANNEL POWER MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTD25P03L1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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