Name: IRLR2908TRPBF
Brand: Infineon Technologies
SKU: IRLR2908TRPBF
Price: 1.67000 USD
Availability: InStock

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IRLR2908TRPBF

Manufacturer part number:IRLR2908TRPBF

Manufacturer:Infineon Technologies

Description:IRLR2908TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR2908TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	28mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	80V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	120W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	120W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 23A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 4.5V
Rise Time	95ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	30A
Threshold Voltage	1V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	80V
Dual Supply Voltage	80V
Avalanche Energy Rating (Eas)	250 mJ
Max Junction Temperature (Tj)	175°C
Nominal Vgs	1 V
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRLR2908TRPBF Product Details

IRLR2908TRPBF Description

IRLR2908TRPBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. Based on the latest processing techniques, it is able to achieve extremely low on-resistance per silicon area. Moreover, it is capable of providing a fast switching speed and improved repetitive avalanche rating. All of these enable the power MOSFET IRLR2908TRPBF to be efficient and reliable in various applications.