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ZXMN2A01FTA

ZXMN2A01FTA

ZXMN2A01FTA

Diodes Incorporated

ZXMN2A01 Series 20 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

SOT-23

ZXMN2A01FTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 120mOhm
Additional FeatureLOW THRESHOLD
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating2.09A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 625mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation625mW
Turn On Delay Time2.49 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 303pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time5.21ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 5.21 ns
Turn-Off Delay Time 7.47 ns
Continuous Drain Current (ID) 2.2A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15346 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.255658$0.255658
10$0.241187$2.41187
100$0.227535$22.7535
500$0.214656$107.328
1000$0.202505$202.505

About ZXMN2A01FTA

The ZXMN2A01FTA from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features ZXMN2A01 Series 20 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the ZXMN2A01FTA, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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