IRLR2905ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLR2905ZPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
110W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
13.5m Ω @ 36A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 5V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
RoHS Status
ROHS3 Compliant
In-Stock:26171 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.28000
$0.28
500
$0.2772
$138.6
1000
$0.2744
$274.4
1500
$0.2716
$407.4
2000
$0.2688
$537.6
2500
$0.266
$665
IRLR2905ZPBF Product Details
IRLR2905ZPBF Description
The IRLR2905ZPBF is a 55V single N-channel HEXFET? Power MOSFET utilizing the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this Infineon IRLR2905ZPBF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. Its features combine to make this design an extremely efficient and reliable device for wide variety of applications.
IRLR2905ZPBF Features
Logic level
Advanced process technology
Ultra-low on-resistance
Repetitive avalanche allowed up to Tjmax
175°C Operating temperature
IRLR2905ZPBF Applications
battery charger
fan controller
e-fuse
load-switch
buck converter
general switching
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