IRFI4110GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFI4110GPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2008
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
4.5MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
61W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
61W
Case Connection
ISOLATED
Turn On Delay Time
24 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.5m Ω @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9540pF @ 50V
Current - Continuous Drain (Id) @ 25°C
72A Tc
Gate Charge (Qg) (Max) @ Vgs
290nC @ 10V
Rise Time
58ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
71 ns
Turn-Off Delay Time
81 ns
Continuous Drain Current (ID)
72A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
290A
Nominal Vgs
4 V
Height
16.13mm
Length
10.75mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1529 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.30000
$4.3
10
$3.86600
$38.66
100
$3.21520
$321.52
500
$2.65106
$1325.53
IRFI4110GPBF Product Details
IRFI4110GPBF Description
IRFI4110GPBF is a kind of power MOSFET for high power range applications with high switching speed. It has a wide safe operating area without hot spots, and has a positive temperature coefficient of resistance, making it suitable for parallel use. When the ambient noise is high, a transistor with a higher threshold voltage can be selected to improve the anti-interference ability; on the contrary, when the noise is low, a transistor with a lower threshold voltage can be selected to reduce the required input drive signal voltage. It brings great convenience to circuit design. Because it is a voltage-controlled device and has a high input impedance, its driving power is very small, and the requirements for the driving circuit are low. Due to these obvious advantages, IRFI4110GPBF are widely used in various fields such as motor speed regulation and switching power supply.
IRFI4110GPBF Features
Fast switching speed Strong overload capability High input impedance and low driving rate Available in the TO-220 Full-Pak package Operating junction temperature of -55 to + 175 °C
IRFI4110GPBF Applications
Synchronous rectification Uninterruptible power supply High-speed switching Hard-switched circuits
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