IRLMS2002 Description
International Rectifier's N-Channel MOSFETs use innovative processing techniques to achieve extraordinarily low on-resistance per silicon area. This feature provides the designer with a device that is particularly efficient for battery and load management applications.
With its tailored leadframe, the Micro6TM package offers a HEXFET? power MOSFET with RDS(on) 60 percent lower than a similar size SOT-23. This packaging is suited for situations where space on the printed circuit board is limited. When compared to the SOT-23, its unique thermal design and RDS(on) reduction allows for a nearly 300 percent boost in current handling.
IRLMS2002 Features
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
2.5V Rated
Lead-Free
IRLMS2002 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
