STE30NK90Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STE30NK90Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
260mOhm
Terminal Finish
Nickel (Ni)
Additional Feature
HIGH VOLTAGE
Subcategory
FET General Purpose Power
Voltage - Rated DC
900V
Technology
MOSFET (Metal Oxide)
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Current Rating
30A
Base Part Number
STE30
Pin Count
4
Number of Elements
1
Power Dissipation-Max
500W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500W
Case Connection
ISOLATED
Turn On Delay Time
67 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
260m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
28A Tc
Gate Charge (Qg) (Max) @ Vgs
490nC @ 10V
Rise Time
59ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
72 ns
Turn-Off Delay Time
250 ns
Continuous Drain Current (ID)
14A
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
28A
Drain to Source Breakdown Voltage
900V
Avalanche Energy Rating (Eas)
500 mJ
Height
9.1mm
Length
38.2mm
Width
25.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4498 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$28.72800
$2872.8
STE30NK90Z Product Details
STE30NK90Z Description
STE30NK90Z high-voltage MOSFETs are called N-channel Power MOSFETs . STE30NK90Z STMicroelectronics were developed with the SuperMESH technology developed and are an enhancement of the well-known PowerMESH. Apart from a significant reduction in the on-resistance, STE30NK90Z MOSFETs are engineered to guarantee an extremely high quality of dv/dt in the most challenging of applications.
STE30NK90Z Features
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected
STE30NK90Z Applications
Switching applications PFC server/telecom power FPD TV power ATX power Industrial power
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